Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 106
... increase in the peak heights of the reflections after calcination probably result from the increase in the scattering - density contrast after pyrolysis of the surfactant . The full width at half maximum of the ( 100 ) reflection does ...
... increase in the peak heights of the reflections after calcination probably result from the increase in the scattering - density contrast after pyrolysis of the surfactant . The full width at half maximum of the ( 100 ) reflection does ...
Page 161
... increases in the surface layer of the SiDLC film with increasing etching time and can clearly be seen after 10 min . of etching . The Si enrichment of the surface layer is correlated with the formation and increase of a surface oxygen ...
... increases in the surface layer of the SiDLC film with increasing etching time and can clearly be seen after 10 min . of etching . The Si enrichment of the surface layer is correlated with the formation and increase of a surface oxygen ...
Page 186
... increase can be significantly reduced if the AlCu thickness is kept constant . The simulated data also show that the overall BEOL RC can be decreased by increasing the line width , at the cost of increased coupling capacitance . Based ...
... increase can be significantly reduced if the AlCu thickness is kept constant . The simulated data also show that the overall BEOL RC can be decreased by increasing the line width , at the cost of increased coupling capacitance . Based ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber