Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 59
Page 117
... increasing bond ionicity , and ( ii ) increases in the effective TO frequency with increasing ionicity . The more important factor relates to the decreases in the IR effective charge with increasing bond ionicity . As shown in the next ...
... increasing bond ionicity , and ( ii ) increases in the effective TO frequency with increasing ionicity . The more important factor relates to the decreases in the IR effective charge with increasing bond ionicity . As shown in the next ...
Page 147
... increased with increasing temperature at an rf power of Sticking Probability ( a ) ( b ) ( c ) Fig . 7 Change in the step coverage of film with increasing CF , flow rate at 30W and 300 ° C . ( a ) 50 sccm of CF4 flow rate , ( b ) 50 ...
... increased with increasing temperature at an rf power of Sticking Probability ( a ) ( b ) ( c ) Fig . 7 Change in the step coverage of film with increasing CF , flow rate at 30W and 300 ° C . ( a ) 50 sccm of CF4 flow rate , ( b ) 50 ...
Page 157
... increasing power and decreasing pressure . The dielectric constant ( k ) of a material is generally correlated to its index of refraction ( n ) , and the determination of the index of refraction is much simpler then the measurement of k ...
... increasing power and decreasing pressure . The dielectric constant ( k ) of a material is generally correlated to its index of refraction ( n ) , and the determination of the index of refraction is much simpler then the measurement of k ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films