Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 117
... increasing bond ionicity , and ( ii ) increases in the effective TO frequency with increasing ionicity . The more important factor relates to the decreases in the IR effective charge with increasing bond ionicity . As shown in the next ...
... increasing bond ionicity , and ( ii ) increases in the effective TO frequency with increasing ionicity . The more important factor relates to the decreases in the IR effective charge with increasing bond ionicity . As shown in the next ...
Page 147
... increased with increasing temperature at an rf power of Sticking Probability ( a ) ( b ) ( c ) Fig . 7 Change in the step coverage of film with increasing CF , flow rate at 30W and 300 ° C . ( a ) 50 sccm of CF4 flow rate , ( b ) 50 ...
... increased with increasing temperature at an rf power of Sticking Probability ( a ) ( b ) ( c ) Fig . 7 Change in the step coverage of film with increasing CF , flow rate at 30W and 300 ° C . ( a ) 50 sccm of CF4 flow rate , ( b ) 50 ...
Page 157
... increasing power and decreasing pressure . The dielectric constant ( k ) of a material is generally correlated to its index of refraction ( n ) , and the determination of the index of refraction is much simpler then the measurement of k ...
... increasing power and decreasing pressure . The dielectric constant ( k ) of a material is generally correlated to its index of refraction ( n ) , and the determination of the index of refraction is much simpler then the measurement of k ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber