Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 29
... indicates that parylene AF - 4 is a semicrystalline polymer . For a similar polymer , parylene N which contains no fluorine at the benzylic position , a glass transition temperature ( T ) of 13 ° C has been reported 19. The reported ...
... indicates that parylene AF - 4 is a semicrystalline polymer . For a similar polymer , parylene N which contains no fluorine at the benzylic position , a glass transition temperature ( T ) of 13 ° C has been reported 19. The reported ...
Page 81
... indicates annealing prior to copper deposition , and " post " indicates annealing after the copper deposition . The abbreviations “ atm ” and “ vac ” indicate , respectively , annealing under the atmosphere or in vacuum . All these ...
... indicates annealing prior to copper deposition , and " post " indicates annealing after the copper deposition . The abbreviations “ atm ” and “ vac ” indicate , respectively , annealing under the atmosphere or in vacuum . All these ...
Page 85
... indicates a weight loss rate of less than 0.25 % / hr . at 425 ° C . The moisture absorption is less than 0.01 % . After sintering , the films are extremely resistant to chemical attack by sulfuric acid , buffered HF , and positive ...
... indicates a weight loss rate of less than 0.25 % / hr . at 425 ° C . The moisture absorption is less than 0.01 % . After sintering , the films are extremely resistant to chemical attack by sulfuric acid , buffered HF , and positive ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber