Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
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Page 29
Figure 6 showed a deflection at 16 °C indicating presence of glass transition
temperatures ( T2 ) due to amorphous region . A small deflection was ... This DSC
analysis indicates that parylene AF - 4 is a semicrystalline polymer . For a similar
...
Figure 6 showed a deflection at 16 °C indicating presence of glass transition
temperatures ( T2 ) due to amorphous region . A small deflection was ... This DSC
analysis indicates that parylene AF - 4 is a semicrystalline polymer . For a similar
...
Page 81
The abbreviation “ pre ” indicates annealing prior to copper deposition , and “
post ” indicates annealing after the copper deposition . The abbreviations “ atm ”
and “ vac ” indicate , respectively , annealing under the atmosphere or in vacuum
.
The abbreviation “ pre ” indicates annealing prior to copper deposition , and “
post ” indicates annealing after the copper deposition . The abbreviations “ atm ”
and “ vac ” indicate , respectively , annealing under the atmosphere or in vacuum
.
Page 85
TGA data indicates a weight loss rate of less than 0 . ... Stud pull tests indicate
good adhesion to SiO2 , Al , and Cu . Results of thermal , dielectric , chemical ,
and adhesion tests indicate that these PTFE films have potential for use as an ...
TGA data indicates a weight loss rate of less than 0 . ... Stud pull tests indicate
good adhesion to SiO2 , Al , and Cu . Results of thermal , dielectric , chemical ,
and adhesion tests indicate that these PTFE films have potential for use as an ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel