Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 45
Page 79
... integration ( ULSI ) and giga - scale integration ( GSI ) require new metal - insulator combinations compatible with the high speed requirements . With increasing miniaturization and integration levels , the transmission delay time also ...
... integration ( ULSI ) and giga - scale integration ( GSI ) require new metal - insulator combinations compatible with the high speed requirements . With increasing miniaturization and integration levels , the transmission delay time also ...
Page 171
... integrating a low ɛ ILD into the device . [ 3 ] In this paper we will focus on the integration of organic low ε dielectric spin on polymers for use as ILD materials . In the past few years many organic materials have been proposed as ...
... integrating a low ɛ ILD into the device . [ 3 ] In this paper we will focus on the integration of organic low ε dielectric spin on polymers for use as ILD materials . In the past few years many organic materials have been proposed as ...
Page 183
... integrated wiring test - sites ( Figure 1 ) . Two - dimensional finite element modelling was employed to simulate wiring capacitances with both the line - to - line and level - to - level capacitance values simulated . ( a ) ( b ) ...
... integrated wiring test - sites ( Figure 1 ) . Two - dimensional finite element modelling was employed to simulate wiring capacitances with both the line - to - line and level - to - level capacitance values simulated . ( a ) ( b ) ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber