Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 35
... interfaces . In particular , the interfaces formed by the deposition of Cr or Co onto PFCB are unchanged after 30 minutes at 390 ° C . The interface formed by the application of the polymer onto Ta is similarly unaffected by high ...
... interfaces . In particular , the interfaces formed by the deposition of Cr or Co onto PFCB are unchanged after 30 minutes at 390 ° C . The interface formed by the application of the polymer onto Ta is similarly unaffected by high ...
Page 36
... interfaces between the dielectric and the various metals used to form the interconnect wiring . Also , an interface formed when the polymer is applied onto a given metal is usually different than the interface formed when the same metal ...
... interfaces between the dielectric and the various metals used to form the interconnect wiring . Also , an interface formed when the polymer is applied onto a given metal is usually different than the interface formed when the same metal ...
Page 40
... interfaces which withstand the processing temperatures . These results are readily explained by the thermal properties of the fluorides which may form at the interface between the metal and the PFCB . Therefore , PFCB may be integrated ...
... interfaces which withstand the processing temperatures . These results are readily explained by the thermal properties of the fluorides which may form at the interface between the metal and the PFCB . Therefore , PFCB may be integrated ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber