Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 35
... interfaces . In particular , the interfaces formed by the deposition of Cr or Co onto PFCB are unchanged after 30 minutes at 390 ° C . The interface formed by the application of the polymer onto Ta is similarly unaffected by high ...
... interfaces . In particular , the interfaces formed by the deposition of Cr or Co onto PFCB are unchanged after 30 minutes at 390 ° C . The interface formed by the application of the polymer onto Ta is similarly unaffected by high ...
Page 36
... interfaces between the dielectric and the various metals used to form the interconnect wiring . Also , an interface formed when the polymer is applied onto a given metal is usually different than the interface formed when the same metal ...
... interfaces between the dielectric and the various metals used to form the interconnect wiring . Also , an interface formed when the polymer is applied onto a given metal is usually different than the interface formed when the same metal ...
Page 40
... interfaces which withstand the processing temperatures . These results are readily explained by the thermal properties of the fluorides which may form at the interface between the metal and the PFCB . Therefore , PFCB may be integrated ...
... interfaces which withstand the processing temperatures . These results are readily explained by the thermal properties of the fluorides which may form at the interface between the metal and the PFCB . Therefore , PFCB may be integrated ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films