Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 42
... ion bombardment of the growing film both contribute to the formation of a crosslinked structure . In this work , we ... ions can easily follow the alternating rf GND Figure 1 : Reactor schematic field ; hence , every half - cycle the ...
... ion bombardment of the growing film both contribute to the formation of a crosslinked structure . In this work , we ... ions can easily follow the alternating rf GND Figure 1 : Reactor schematic field ; hence , every half - cycle the ...
Page 167
... ion- incident angle , and that the film at the slanting edge of the substrate is sputtered by Ar ions® . On the other hand , it is clear from the reactive etching study of fluorocarbon plasma that the etching reaction due to CFx ions ...
... ion- incident angle , and that the film at the slanting edge of the substrate is sputtered by Ar ions® . On the other hand , it is clear from the reactive etching study of fluorocarbon plasma that the etching reaction due to CFx ions ...
Page 193
... ions striking the surface in the 10 ms on time would be ~ 6.25 x 1012 ions / cm2 . This analysis indicates that only a small fraction ( ~ 0.011 ) of incident ions produce dangling bonds . In addition , there are ~ 1015 surface sites ...
... ions striking the surface in the 10 ms on time would be ~ 6.25 x 1012 ions / cm2 . This analysis indicates that only a small fraction ( ~ 0.011 ) of incident ions produce dangling bonds . In addition , there are ~ 1015 surface sites ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber