Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 150
... layers were sputter deposited at 100 ° C with an intentional Si - doping of 0.75 % . For most of the samples , the SiOF deposited layer was 0.15 to 0.19 μm thick , and all measurements were taken approx . 2 to 14 days after film ...
... layers were sputter deposited at 100 ° C with an intentional Si - doping of 0.75 % . For most of the samples , the SiOF deposited layer was 0.15 to 0.19 μm thick , and all measurements were taken approx . 2 to 14 days after film ...
Page 161
... layer of 880 nm containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in ...
... layer of 880 nm containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in ...
Page 162
... layer is formed as a result of the RIE , it would be masked by the noise of the RBS spectrum if the layer is ≤5 nm thick . The RBS results thus seem to indicate that if oxidized Si enriched layers were formed on the surface of the ...
... layer is formed as a result of the RIE , it would be masked by the noise of the RBS spectrum if the layer is ≤5 nm thick . The RBS results thus seem to indicate that if oxidized Si enriched layers were formed on the surface of the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films