Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 150
... layers were sputter deposited at 100 ° C with an intentional Si - doping of 0.75 % . For most of the samples , the SiOF deposited layer was 0.15 to 0.19 μm thick , and all measurements were taken approx . 2 to 14 days after film ...
... layers were sputter deposited at 100 ° C with an intentional Si - doping of 0.75 % . For most of the samples , the SiOF deposited layer was 0.15 to 0.19 μm thick , and all measurements were taken approx . 2 to 14 days after film ...
Page 161
... layer of 880 nm containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in ...
... layer of 880 nm containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in ...
Page 162
... layer is formed as a result of the RIE , it would be masked by the noise of the RBS spectrum if the layer is ≤5 nm thick . The RBS results thus seem to indicate that if oxidized Si enriched layers were formed on the surface of the ...
... layer is formed as a result of the RIE , it would be masked by the noise of the RBS spectrum if the layer is ≤5 nm thick . The RBS results thus seem to indicate that if oxidized Si enriched layers were formed on the surface of the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber