Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 15
... less ordered regions . Within the ordered regions , the plane of the phenyl ring tends to align parallel to the substrate . INTRODUCTION Because of its excellent thermal , mechanical and electrical properties , polyimide has received ...
... less ordered regions . Within the ordered regions , the plane of the phenyl ring tends to align parallel to the substrate . INTRODUCTION Because of its excellent thermal , mechanical and electrical properties , polyimide has received ...
Page 85
... less than 0.25 % / hr . at 425 ° C . The moisture absorption is less than 0.01 % . After sintering , the films are extremely resistant to chemical attack by sulfuric acid , buffered HF , and positive photoresist developer . The etch ...
... less than 0.25 % / hr . at 425 ° C . The moisture absorption is less than 0.01 % . After sintering , the films are extremely resistant to chemical attack by sulfuric acid , buffered HF , and positive photoresist developer . The etch ...
Page 92
... less than 1 g / cm3 ( porosity > 55 % ) , the dielectric constant is predicted to be always less than 2.4 . For a density of 1 g / cm3 , a sample has the appearance and handling characteristics of dense glass . 3 Aerogels are well ...
... less than 1 g / cm3 ( porosity > 55 % ) , the dielectric constant is predicted to be always less than 2.4 . For a density of 1 g / cm3 , a sample has the appearance and handling characteristics of dense glass . 3 Aerogels are well ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber