Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 93
As - deposited liquid precursor film Unconstrained drying High density Evaporation and Gelation Evaporation w / o gelation Constrained drying Gelation Low density but pullout and cracks , poor control of density Drying w / o shrinkage ...
As - deposited liquid precursor film Unconstrained drying High density Evaporation and Gelation Evaporation w / o gelation Constrained drying Gelation Low density but pullout and cracks , poor control of density Drying w / o shrinkage ...
Page 97
... liquid menisci which cause shrinkage . However , supercritical processing requires high pressures ( > 60 bar ) and Figure 11. Balance between pore fluid often requires solvent exchanges before drying capillary pressure and gel stiffness ...
... liquid menisci which cause shrinkage . However , supercritical processing requires high pressures ( > 60 bar ) and Figure 11. Balance between pore fluid often requires solvent exchanges before drying capillary pressure and gel stiffness ...
Page 137
... liquid species into the pump , a liquid N2 trap is set before the pump . Films are deposited with a capacitively coupled RF ( 13.56MHz ) plasma enhanced chemical vapor deposition ( PE - CVD ) method . RF powe density is 1 W / cm2 ...
... liquid species into the pump , a liquid N2 trap is set before the pump . Films are deposited with a capacitively coupled RF ( 13.56MHz ) plasma enhanced chemical vapor deposition ( PE - CVD ) method . RF powe density is 1 W / cm2 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber