Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 53
... load of 2 mN and then unloaded . The monitored load and displacement of the indenter exhibited the typical hysteresis and residual displacement upon loading of a brittle material . The hardness and modulus of fused silica in comparison ...
... load of 2 mN and then unloaded . The monitored load and displacement of the indenter exhibited the typical hysteresis and residual displacement upon loading of a brittle material . The hardness and modulus of fused silica in comparison ...
Page 80
... loading rate of 1 N / min . The scratches were analyzed , using both optical microscopy and SEM , to determine the critical load necessary to delaminate copper from the polymer substrate . Type 600 3M Scotch tape peel test was used to ...
... loading rate of 1 N / min . The scratches were analyzed , using both optical microscopy and SEM , to determine the critical load necessary to delaminate copper from the polymer substrate . Type 600 3M Scotch tape peel test was used to ...
Page 81
... Load ( N ) Critical Load ( N ) Remaining Adhered 1.5 625150 2 - Microscratch Test for Sputtered Copper Microscratch Test for Evaporated Copper Pool Test for Evaporated Copper A. a . 112284 ( HC2F3 . Sputtered sputterec Telar Tefior AF ...
... Load ( N ) Critical Load ( N ) Remaining Adhered 1.5 625150 2 - Microscratch Test for Sputtered Copper Microscratch Test for Evaporated Copper Pool Test for Evaporated Copper A. a . 112284 ( HC2F3 . Sputtered sputterec Telar Tefior AF ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber