Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 51
... loss at this temperature was < 0.2 % / hr . At 425 ° C , the isothermal weight losses range between 0.4-0.75 % / hr . It is not clear at this point whether this weight loss is due to polymer decomposition or to the continued loss of the ...
... loss at this temperature was < 0.2 % / hr . At 425 ° C , the isothermal weight losses range between 0.4-0.75 % / hr . It is not clear at this point whether this weight loss is due to polymer decomposition or to the continued loss of the ...
Page 152
... loss of the highly polarizable , weakly - bound H2O species from the film . In either case , the electrical measurements support the FTIR and ERD measurements that moisture absorption in the SiOF films increases with increasing F ...
... loss of the highly polarizable , weakly - bound H2O species from the film . In either case , the electrical measurements support the FTIR and ERD measurements that moisture absorption in the SiOF films increases with increasing F ...
Page 180
... loss vs. temperature provides a complementary measure of thermal stability ( see Table VI ) . FLARE has a Tg of only 260 ° C , yet isothermal weight loss for this material is comparable to PFCB , which has a of 400 ° C . go Table V ...
... loss vs. temperature provides a complementary measure of thermal stability ( see Table VI ) . FLARE has a Tg of only 260 ° C , yet isothermal weight loss for this material is comparable to PFCB , which has a of 400 ° C . go Table V ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber