Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 91
... material ( silica ) . We have previously reported success in synthesizing low density , low dielectric constant ( K < 2 ) thin films using ambient pressure processing . However , processing of those films was complicated due to large ...
... material ( silica ) . We have previously reported success in synthesizing low density , low dielectric constant ( K < 2 ) thin films using ambient pressure processing . However , processing of those films was complicated due to large ...
Page 155
... materials were investigated for their potential applications as low - k dielectrics for the back end of the line ( BEOL ) interconnect structures in ULSI circuits . Hydrogenated DLC and fluorine containing DLC ( FDLC ) were studied as a low ...
... materials were investigated for their potential applications as low - k dielectrics for the back end of the line ( BEOL ) interconnect structures in ULSI circuits . Hydrogenated DLC and fluorine containing DLC ( FDLC ) were studied as a low ...
Page 195
... low - k values observed . INTRODUCTION constants · · The semiconductor industry has long been expecting the use of materials with reduced dielectric commonly referred to as low - k materials to replace conventional intermetal ...
... low - k values observed . INTRODUCTION constants · · The semiconductor industry has long been expecting the use of materials with reduced dielectric commonly referred to as low - k materials to replace conventional intermetal ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber