Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 91
... low density , low dielectric constant ( K < 2 ) thin films using ambient pressure processing . However , processing of those films was complicated due to large number of process steps and difficulties in independently controlling both ...
... low density , low dielectric constant ( K < 2 ) thin films using ambient pressure processing . However , processing of those films was complicated due to large number of process steps and difficulties in independently controlling both ...
Page 155
... low - k dielectrics for the back end of the line ( BEOL ) interconnect structures in ULSI circuits . Hydrogenated DLC and fluorine containing DLC ( FDLC ) were studied as a low - k interlevel and intralevel dielectrics ( ILD ) , while ...
... low - k dielectrics for the back end of the line ( BEOL ) interconnect structures in ULSI circuits . Hydrogenated DLC and fluorine containing DLC ( FDLC ) were studied as a low - k interlevel and intralevel dielectrics ( ILD ) , while ...
Page 199
... k = 4.2 is reached again . Electrical break - down field strength ' are ... low mechanical density . Due to this microporosity , silane fragments can ... low - k regime . The slope of the k - vs. - Tcure curve is rather large , however ...
... k = 4.2 is reached again . Electrical break - down field strength ' are ... low mechanical density . Due to this microporosity , silane fragments can ... low - k regime . The slope of the k - vs. - Tcure curve is rather large , however ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films