Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
... lower stress ( 250 MPa ) and lower ε ( 2.7 ) , however these less crosslinked films exhibited significant weight ( thickness ) loss at 400 ° C . The fluorinated films exhibit similar trends , however in general lower e's are realized ...
... lower stress ( 250 MPa ) and lower ε ( 2.7 ) , however these less crosslinked films exhibited significant weight ( thickness ) loss at 400 ° C . The fluorinated films exhibit similar trends , however in general lower e's are realized ...
Page 92
... lower values . Although porosity leads to a lower dielectric constant than the corresponding dense material , additional materials and processing issues may be introduced as compared to a dense material . Materials issues include , the ...
... lower values . Although porosity leads to a lower dielectric constant than the corresponding dense material , additional materials and processing issues may be introduced as compared to a dense material . Materials issues include , the ...
Page 163
... lower than that necessary to form contiguously connected regions of the complex silicon - containing compounds ... lower k values have lower stresses but are unstable at this temperature . Thermally stable FLDC films with k of about 2.8 ...
... lower than that necessary to form contiguously connected regions of the complex silicon - containing compounds ... lower k values have lower stresses but are unstable at this temperature . Thermally stable FLDC films with k of about 2.8 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber