Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
... lower stress ( 250 MPa ) and lower ε ( 2.7 ) , however these less crosslinked films exhibited significant weight ( thickness ) loss at 400 ° C . The fluorinated films exhibit similar trends , however in general lower e's are realized ...
... lower stress ( 250 MPa ) and lower ε ( 2.7 ) , however these less crosslinked films exhibited significant weight ( thickness ) loss at 400 ° C . The fluorinated films exhibit similar trends , however in general lower e's are realized ...
Page 92
... lower values . Although porosity leads to a lower dielectric constant than the corresponding dense material , additional materials and processing issues may be introduced as compared to a dense material . Materials issues include , the ...
... lower values . Although porosity leads to a lower dielectric constant than the corresponding dense material , additional materials and processing issues may be introduced as compared to a dense material . Materials issues include , the ...
Page 163
... lower than that necessary to form contiguously connected regions of the complex silicon - containing compounds ... lower k values have lower stresses but are unstable at this temperature . Thermally stable FLDC films with k of about 2.8 ...
... lower than that necessary to form contiguously connected regions of the complex silicon - containing compounds ... lower k values have lower stresses but are unstable at this temperature . Thermally stable FLDC films with k of about 2.8 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films