Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
4 . These films were judged to be highly crosslinked . Under different deposition
conditions , CHx films were prepared with much lower stress ( 250 MPa ) and
lower & ( 2 . 7 ) , however these less crosslinked films exhibited significant weight
...
4 . These films were judged to be highly crosslinked . Under different deposition
conditions , CHx films were prepared with much lower stress ( 250 MPa ) and
lower & ( 2 . 7 ) , however these less crosslinked films exhibited significant weight
...
Page 92
Although porosity leads to a lower dielectric constant than the corresponding
dense material , additional materials and processing issues may be introduced
as compared to a dense material . Materials issues include , the necessity of
having ...
Although porosity leads to a lower dielectric constant than the corresponding
dense material , additional materials and processing issues may be introduced
as compared to a dense material . Materials issues include , the necessity of
having ...
Page 163
Based on these XPS results we speculate that the 3 % Si concentration in sample
S3 is lower than that necessary to form contiguously connected regions of the
complex silicon - containing compounds described in Ref . [ 11 ] . The film may ...
Based on these XPS results we speculate that the 3 % Si concentration in sample
S3 is lower than that necessary to form contiguously connected regions of the
complex silicon - containing compounds described in Ref . [ 11 ] . The film may ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |