Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 85
... material for ULSI . A novel nanoparticle dispersion of PTFE was developed that permits the spin - coat deposition of ... material . INTRODUCTION The need for low dielectric constant materials in 0.18 um through 0.10 μm interconnect ...
... material for ULSI . A novel nanoparticle dispersion of PTFE was developed that permits the spin - coat deposition of ... material . INTRODUCTION The need for low dielectric constant materials in 0.18 um through 0.10 μm interconnect ...
Page 92
... material , additional materials and processing issues may be introduced as compared to a dense material . Materials issues include , the necessity of having all pores significantly smaller than circuit feature sizes , the strength ...
... material , additional materials and processing issues may be introduced as compared to a dense material . Materials issues include , the necessity of having all pores significantly smaller than circuit feature sizes , the strength ...
Page 195
... material for multilevel metallization ( MLM ) schemes . In this work we report on the properties of films which have been cured at different temperatures covering the range from 350 ° C to 850 ° C . It is found that the material remains ...
... material for multilevel metallization ( MLM ) schemes . In this work we report on the properties of films which have been cured at different temperatures covering the range from 350 ° C to 850 ° C . It is found that the material remains ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber