Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 93
Page ix
... materials range from the evolution of silicon dioxide to fluorinated silicate glass , to the use of inorganic / organic polymers and spin - on - material , to fluorinated diamond - like carbon and nanoporous silica . The symposium also ...
... materials range from the evolution of silicon dioxide to fluorinated silicate glass , to the use of inorganic / organic polymers and spin - on - material , to fluorinated diamond - like carbon and nanoporous silica . The symposium also ...
Page 4
... materials for IMD . It is somewhat surprising that at present , the interest among the IC community in low & materials is not only widespread among the producers of logic chips , but is growing among producers of memory chips as well ...
... materials for IMD . It is somewhat surprising that at present , the interest among the IC community in low & materials is not only widespread among the producers of logic chips , but is growing among producers of memory chips as well ...
Page 41
... materials commonly employed in device fabrication . However , recent advances in tighter interconnect packing and the drive toward higher processor speeds and lower power consumption has spurred a search for insulating materials with a ...
... materials commonly employed in device fabrication . However , recent advances in tighter interconnect packing and the drive toward higher processor speeds and lower power consumption has spurred a search for insulating materials with a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber