Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 89
... measurements is about 1.85 . The dielectric constant of PTFE should be about 2.0 . We believe the difference to be caused ... measured an etch rate of 50 nm / min in a PlasmaTherm 7000 RIE system using an oxygen flow rate of 200 sccm , a ...
... measurements is about 1.85 . The dielectric constant of PTFE should be about 2.0 . We believe the difference to be caused ... measured an etch rate of 50 nm / min in a PlasmaTherm 7000 RIE system using an oxygen flow rate of 200 sccm , a ...
Page 101
... measured using spectroscopic ellipsometry and Rutherford backscattering spectroscopy ( RBS ) . Ellipsometry measurement data fitted well with the uniform SiO2 and air mixture model as shown in Figure 1. RBS measurements agreed with the ...
... measured using spectroscopic ellipsometry and Rutherford backscattering spectroscopy ( RBS ) . Ellipsometry measurement data fitted well with the uniform SiO2 and air mixture model as shown in Figure 1. RBS measurements agreed with the ...
Page 157
dielectric constants were measured at 1 MHz . For the electrical resistivity measurements , the current density was measured as a function of the electric field . Details of the electrical characterization techniques can be found ...
dielectric constants were measured at 1 MHz . For the electrical resistivity measurements , the current density was measured as a function of the electric field . Details of the electrical characterization techniques can be found ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber