Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 89
... measurements is about 1.85 . The dielectric constant of PTFE should be about 2.0 . We believe the difference to be caused ... measured an etch rate of 50 nm / min in a PlasmaTherm 7000 RIE system using an oxygen flow rate of 200 sccm , a ...
... measurements is about 1.85 . The dielectric constant of PTFE should be about 2.0 . We believe the difference to be caused ... measured an etch rate of 50 nm / min in a PlasmaTherm 7000 RIE system using an oxygen flow rate of 200 sccm , a ...
Page 101
... measured using spectroscopic ellipsometry and Rutherford backscattering spectroscopy ( RBS ) . Ellipsometry measurement data fitted well with the uniform SiO2 and air mixture model as shown in Figure 1. RBS measurements agreed with the ...
... measured using spectroscopic ellipsometry and Rutherford backscattering spectroscopy ( RBS ) . Ellipsometry measurement data fitted well with the uniform SiO2 and air mixture model as shown in Figure 1. RBS measurements agreed with the ...
Page 157
dielectric constants were measured at 1 MHz . For the electrical resistivity measurements , the current density was measured as a function of the electric field . Details of the electrical characterization techniques can be found ...
dielectric constants were measured at 1 MHz . For the electrical resistivity measurements , the current density was measured as a function of the electric field . Details of the electrical characterization techniques can be found ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films