Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 101
Porosity of the films were measured using spectroscopic ellipsometry and
Rutherford backscattering spectroscopy ( RBS ) . Ellipsometry measurement data
fitted well with the uniform SiO2 and air mixture model as shown in Figure 1 .
Porosity of the films were measured using spectroscopic ellipsometry and
Rutherford backscattering spectroscopy ( RBS ) . Ellipsometry measurement data
fitted well with the uniform SiO2 and air mixture model as shown in Figure 1 .
Page 131
( c ) Contact Angle Measurements Measurements of contact angle indicate
whether the surface is hydrophilic or hydrophobic in nature . Lower values of
contact angle suggest a more hydrophilic surface . Comparisons between the
various film ...
( c ) Contact Angle Measurements Measurements of contact angle indicate
whether the surface is hydrophilic or hydrophobic in nature . Lower values of
contact angle suggest a more hydrophilic surface . Comparisons between the
various film ...
Page 152
In either case , the electrical measurements support the FTIR and ERD
measurements that moisture absorption in the SiOF films increases with ... The F /
O ratio in SiOF films was measured by nanoprobe EDAX with a 10 nm spot size .
In either case , the electrical measurements support the FTIR and ERD
measurements that moisture absorption in the SiOF films increases with ... The F /
O ratio in SiOF films was measured by nanoprobe EDAX with a 10 nm spot size .
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |