Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 41
... mechanical stability render them unsuitable for most interlevel dielectric applications . In this work we explore the plasma assisted deposition of fluorocarbon films from hexafluoropropylene ( C3F6 ) and hydrogen in order to understand ...
... mechanical stability render them unsuitable for most interlevel dielectric applications . In this work we explore the plasma assisted deposition of fluorocarbon films from hexafluoropropylene ( C3F6 ) and hydrogen in order to understand ...
Page 42
... mechanical , and electrical performance of the material . Previous studies of PECVD fluorocarbon films have used CF4 , C4F8 , and CH as reactants [ 6 , 7 ] . The resulting films exhibited low dielectric constant ( 2 - 2.5 ) and some ...
... mechanical , and electrical performance of the material . Previous studies of PECVD fluorocarbon films have used CF4 , C4F8 , and CH as reactants [ 6 , 7 ] . The resulting films exhibited low dielectric constant ( 2 - 2.5 ) and some ...
Page 45
... Mechanical and thermal data for three of the four processes . Hardness / Modulus ( both GPa ) 200 ° C 3.32 / 20.65 Process 20 ° C 400 ° C 1 1.23 / 10.73 2 0.39 / 5.33 3 0.29 / 4.68 0.65 / 6.35 0.24 / 3.66 0.67 / 7.50 -- Weight ...
... Mechanical and thermal data for three of the four processes . Hardness / Modulus ( both GPa ) 200 ° C 3.32 / 20.65 Process 20 ° C 400 ° C 1 1.23 / 10.73 2 0.39 / 5.33 3 0.29 / 4.68 0.65 / 6.35 0.24 / 3.66 0.67 / 7.50 -- Weight ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber