Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 36
Also , an interface formed when the polymer is applied onto a given metal is
usually different than the interface formed ... Some technologies under
development include combinations of Cu and various refractory metals as
diffusion barriers or ...
Also , an interface formed when the polymer is applied onto a given metal is
usually different than the interface formed ... Some technologies under
development include combinations of Cu and various refractory metals as
diffusion barriers or ...
Page 40
Table 1 . Thermal Properties of Metal Fluorides Melting Boiling Point ( °C ) Point (
°C ) Compound Group Sublimation ... Transition metals to the right of the periodic
table coordinate with fewer fluorine atoms and the reaction products possess ...
Table 1 . Thermal Properties of Metal Fluorides Melting Boiling Point ( °C ) Point (
°C ) Compound Group Sublimation ... Transition metals to the right of the periodic
table coordinate with fewer fluorine atoms and the reaction products possess ...
Page 103
the delamination , because metal lines were capped with a thin PETEOS liner
and xerogel filled PETEOS trenches very well . It was possible that during the
mechanical cleavage , metal lines were under stress and deformed themselves .
the delamination , because metal lines were capped with a thin PETEOS liner
and xerogel filled PETEOS trenches very well . It was possible that during the
mechanical cleavage , metal lines were under stress and deformed themselves .
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel