Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 87
... method D3359-93 , a tape pull test , as a screening method for evaluating adhesion for IC dielectric use We attempted to correlate results from this method to epoxy stud pull testing . This correlation indicated that interfaces with the ...
... method D3359-93 , a tape pull test , as a screening method for evaluating adhesion for IC dielectric use We attempted to correlate results from this method to epoxy stud pull testing . This correlation indicated that interfaces with the ...
Page 88
... method is not generally used in the semiconductor industry . We have also used subjective scratch metrology as a screening method . Basically , we scratch the surface and examine the scratch with optical microscopy and profilometry to ...
... method is not generally used in the semiconductor industry . We have also used subjective scratch metrology as a screening method . Basically , we scratch the surface and examine the scratch with optical microscopy and profilometry to ...
Page 137
... method . The films show poor water resistivity , which originates in inclusion of NCO in the films . This has been improved by mixing O2 to the source gas . SiO : F films have been prepared by mixing SiF4 . The film with F concentration ...
... method . The films show poor water resistivity , which originates in inclusion of NCO in the films . This has been improved by mixing O2 to the source gas . SiO : F films have been prepared by mixing SiF4 . The film with F concentration ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber