Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 76
... micron < -- 0.8 micron -1.4 micron 10 Curing time ( min ) 15 Fig.4 Degree of imidization from the FTIR spectra as a function of time and polyimide film thickness . Films were annealed at 250 ° C in N2 Depolymerization of polyamic acid ...
... micron < -- 0.8 micron -1.4 micron 10 Curing time ( min ) 15 Fig.4 Degree of imidization from the FTIR spectra as a function of time and polyimide film thickness . Films were annealed at 250 ° C in N2 Depolymerization of polyamic acid ...
Page 85
... micron PTFE films spin - coat deposited from a PTFE nanoemulsion . We have been working extensively on the properties of sub - micron PTFE films . This paper is a progress report on those properties . 85 Mat . Res . Soc . Symp . Proc ...
... micron PTFE films spin - coat deposited from a PTFE nanoemulsion . We have been working extensively on the properties of sub - micron PTFE films . This paper is a progress report on those properties . 85 Mat . Res . Soc . Symp . Proc ...
Page 119
... micron interconnection , the requirements for interlayer dielectric film include narrow wiring gap - fill without void formation , global planarization , and high resistance to moisture . On the other hand , high performance circuits ...
... micron interconnection , the requirements for interlayer dielectric film include narrow wiring gap - fill without void formation , global planarization , and high resistance to moisture . On the other hand , high performance circuits ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber