Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 26
... microstructure between thin and thick films . We have performed dynamic and isothermal TGA analysis on parylene AF - 4 films deposited on the silicon wafers . The thickness of the film was about 1um . TGAs were performed on a Cahn TG ...
... microstructure between thin and thick films . We have performed dynamic and isothermal TGA analysis on parylene AF - 4 films deposited on the silicon wafers . The thickness of the film was about 1um . TGAs were performed on a Cahn TG ...
Page 97
... microstructure changes from a spherical to a cylindrical morphology . Continued aging yields coalescence into coarser microstructure with reduced strength . The steps illustrated in Figure 10 yield a continuous drop in surface area and ...
... microstructure changes from a spherical to a cylindrical morphology . Continued aging yields coalescence into coarser microstructure with reduced strength . The steps illustrated in Figure 10 yield a continuous drop in surface area and ...
Page 199
... microstructure is fully built - up at the recommended cure temperature of 400 ° C . These films show a dielectric constant of 3.0 , are moisture - free , and etch very fast in DHF because of their low mechanical density . Due to this ...
... microstructure is fully built - up at the recommended cure temperature of 400 ° C . These films show a dielectric constant of 3.0 , are moisture - free , and etch very fast in DHF because of their low mechanical density . Due to this ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber