Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page x
... Microwave Processing of Materials V , M.F. Iskander , J.O. Kiggans , Jr. , J.Ch. Bolomey , 1996 , ISBN : 1-55899-333-9 Volume 431— Microporous and Macroporous Materials , R.F. Lobo , J.S. Beck , S.L. Suib , D.R. Corbin , M.E. Davis ...
... Microwave Processing of Materials V , M.F. Iskander , J.O. Kiggans , Jr. , J.Ch. Bolomey , 1996 , ISBN : 1-55899-333-9 Volume 431— Microporous and Macroporous Materials , R.F. Lobo , J.S. Beck , S.L. Suib , D.R. Corbin , M.E. Davis ...
Page 119
... microwave cavity resonator . Microwaves with 2.45 GHz frequency were introduced into the plasma chamber through a quartz bell jar . A divergence magnetic field extracted the Mat . Res . Soc . Symp . Proc . Vol . 443 © 1997 Materials ...
... microwave cavity resonator . Microwaves with 2.45 GHz frequency were introduced into the plasma chamber through a quartz bell jar . A divergence magnetic field extracted the Mat . Res . Soc . Symp . Proc . Vol . 443 © 1997 Materials ...
Page 149
... microwave power used to excite the plasma was 1500 W and the RF bias power from substrate to plasma was 2300 W. The substrate temperature was 330 ° C . These conditions have previously been found to lead to SiOF films with excellent ...
... microwave power used to excite the plasma was 1500 W and the RF bias power from substrate to plasma was 2300 W. The substrate temperature was 330 ° C . These conditions have previously been found to lead to SiOF films with excellent ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber