Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 18
... mode description and mode orientation relative to the polymer chain , according to previous assignments . 10 The remaining columns show relative absorbances for s- and p - polarized spectra ( As and Ap ) , normalized to the 1500 cm - 1 ...
... mode description and mode orientation relative to the polymer chain , according to previous assignments . 10 The remaining columns show relative absorbances for s- and p - polarized spectra ( As and Ap ) , normalized to the 1500 cm - 1 ...
Page 116
stretching mode 12 3.5 static , Es 2 3 10 3 A = contribution of 2.5 IR vibrations 2 3 1.5 optical frequency , & 4 5 ... mode 0.9 1.0 1.1 1.2 rocking mode 0.8 0.9 1.0 2 0.8 0.7 100 120 140 160 180 100 120 140 160 180 100 120 140 160 180 ...
stretching mode 12 3.5 static , Es 2 3 10 3 A = contribution of 2.5 IR vibrations 2 3 1.5 optical frequency , & 4 5 ... mode 0.9 1.0 1.1 1.2 rocking mode 0.8 0.9 1.0 2 0.8 0.7 100 120 140 160 180 100 120 140 160 180 100 120 140 160 180 ...
Page 144
... mode to a higher wave number and reduces FWHM and area of Si - O stretching mode . Thus , the appearance of Si - F mode decreases ionic property of SiO , [ 3 ] . 2 As we know , the dielectric constant at a rf of 1 MHz , consists of that ...
... mode to a higher wave number and reduces FWHM and area of Si - O stretching mode . Thus , the appearance of Si - F mode decreases ionic property of SiO , [ 3 ] . 2 As we know , the dielectric constant at a rf of 1 MHz , consists of that ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber