Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 16
... molecular chain orientation of our VDP PMDA - ODA films with their spin cast counterparts . As described below , ATR FTIR spectroscopy is ideally suited to the study molecular orientation since both in - plane and out - of plane ...
... molecular chain orientation of our VDP PMDA - ODA films with their spin cast counterparts . As described below , ATR FTIR spectroscopy is ideally suited to the study molecular orientation since both in - plane and out - of plane ...
Page 48
... molecules through the polycondensation , shrinkage occurs during curing which often leads to cracking , a situation ... molecular weights depending on the condensation conditions . " The structure of silsesquioxanes has been described ...
... molecules through the polycondensation , shrinkage occurs during curing which often leads to cracking , a situation ... molecular weights depending on the condensation conditions . " The structure of silsesquioxanes has been described ...
Page 83
... molecules contributing a symptomatic peak around 2400 cm1 . 0 ° XPS survey scans at ( perpendicular ) , 35 ° and 70 ... molecular weight species . On the other hand , the SP - Teflon film develops a compressive stress upon annealing ...
... molecules contributing a symptomatic peak around 2400 cm1 . 0 ° XPS survey scans at ( perpendicular ) , 35 ° and 70 ... molecular weight species . On the other hand , the SP - Teflon film develops a compressive stress upon annealing ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber