Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 60
... monomers . Activation of the halogen for nucleophilic replacement is achieved by decreasing the electron density of the aromatic ring to which it is attached . This can be done by the addition of electron accepting substituents , or by ...
... monomers . Activation of the halogen for nucleophilic replacement is achieved by decreasing the electron density of the aromatic ring to which it is attached . This can be done by the addition of electron accepting substituents , or by ...
Page 61
... monomers of type 3 are prepared in a totally different way , starting from carboxylic acid chlorides 8 and nitriles 12 ( Scheme 3 ) . R2 R2 + N = N = CH2 NNCH , HCI R2 BC13 - N2 9 11 10 R2 R2 11 R1 3 12 Scheme 3 : Synthesis of monomers ...
... monomers of type 3 are prepared in a totally different way , starting from carboxylic acid chlorides 8 and nitriles 12 ( Scheme 3 ) . R2 R2 + N = N = CH2 NNCH , HCI R2 BC13 - N2 9 11 10 R2 R2 11 R1 3 12 Scheme 3 : Synthesis of monomers ...
Page 62
... monomers 2a and 2b exhibit somewhat reduced reactivity13 . The thiazole ring is less electron poor than the oxazole ring , a common feature between sulfur and oxygen hete- roaromatic rings . Best results in terms of high molar mass ...
... monomers 2a and 2b exhibit somewhat reduced reactivity13 . The thiazole ring is less electron poor than the oxazole ring , a common feature between sulfur and oxygen hete- roaromatic rings . Best results in terms of high molar mass ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber