Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 60
... monomers . Activation of the halogen for nucleophilic replacement is achieved by decreasing the electron density of the aromatic ring to which it is attached . This can be done by the addition of electron accepting substituents , or by ...
... monomers . Activation of the halogen for nucleophilic replacement is achieved by decreasing the electron density of the aromatic ring to which it is attached . This can be done by the addition of electron accepting substituents , or by ...
Page 61
... monomers of type 3 are prepared in a totally different way , starting from carboxylic acid chlorides 8 and nitriles 12 ( Scheme 3 ) . R2 R2 + N = N = CH2 NNCH , HCI R2 BC13 - N2 9 11 10 R2 R2 11 R1 3 12 Scheme 3 : Synthesis of monomers ...
... monomers of type 3 are prepared in a totally different way , starting from carboxylic acid chlorides 8 and nitriles 12 ( Scheme 3 ) . R2 R2 + N = N = CH2 NNCH , HCI R2 BC13 - N2 9 11 10 R2 R2 11 R1 3 12 Scheme 3 : Synthesis of monomers ...
Page 62
... monomers 2a and 2b exhibit somewhat reduced reactivity13 . The thiazole ring is less electron poor than the oxazole ring , a common feature between sulfur and oxygen hete- roaromatic rings . Best results in terms of high molar mass ...
... monomers 2a and 2b exhibit somewhat reduced reactivity13 . The thiazole ring is less electron poor than the oxazole ring , a common feature between sulfur and oxygen hete- roaromatic rings . Best results in terms of high molar mass ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films