Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 7
Page 80
... mTorr . In the case of SP films , a disc of conventional PTFE was placed on the RF electrode and glass or silicon substrates were placed on the grounded electrode ; Ar and CF4 gases were used at a flow rate of 10 sccm , and the RF power ...
... mTorr . In the case of SP films , a disc of conventional PTFE was placed on the RF electrode and glass or silicon substrates were placed on the grounded electrode ; Ar and CF4 gases were used at a flow rate of 10 sccm , and the RF power ...
Page 157
... mtorr 200 mtorr △ 300 mtorr 100 mtorr - ann O 200 mtorr - ann A 300 mtorr - ann 1.4- 100 mtor 1.2- O 200 mtor A 300 mtor 30+ 1.0+ 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Power ( W ) Power ( W ) Figure 1 ( left ) . Hydrogen ...
... mtorr 200 mtorr △ 300 mtorr 100 mtorr - ann O 200 mtorr - ann A 300 mtorr - ann 1.4- 100 mtor 1.2- O 200 mtor A 300 mtor 30+ 1.0+ 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Power ( W ) Power ( W ) Figure 1 ( left ) . Hydrogen ...
Page 159
... mtorr 200 mtorr A300 mtorr Thickness change ( % ) 20 1200 B 1000 0 800 -20- 600 00 -40- -60- 400 -80 ם 100 mtorr - IR 200 O 200 mtorr - IR A 300 mtorr - IR 0 □ Stress O D.th -100 -80 0 0 20 40 60 80 100 120 140 2.6 2.8 3.0 3.2 Power ...
... mtorr 200 mtorr A300 mtorr Thickness change ( % ) 20 1200 B 1000 0 800 -20- 600 00 -40- -60- 400 -80 ם 100 mtorr - IR 200 O 200 mtorr - IR A 300 mtorr - IR 0 □ Stress O D.th -100 -80 0 0 20 40 60 80 100 120 140 2.6 2.8 3.0 3.2 Power ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films