Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
... observed in CHx films which exhibited an ɛ of 3.4 . These films were judged to be highly crosslinked . Under different deposition conditions , CHx films were prepared with much lower stress ( 250 MPa ) and lower ε ( 2.7 ) , however ...
... observed in CHx films which exhibited an ɛ of 3.4 . These films were judged to be highly crosslinked . Under different deposition conditions , CHx films were prepared with much lower stress ( 250 MPa ) and lower ε ( 2.7 ) , however ...
Page 26
... observed a 2.2 % weight loss in the region of 250-400 ° C . However , after annealing the parylene AF - 4 film at 450 C for 0.5 hr in nitrogen , we only observed about 0.5 % weight loss . This indicated presence of volatile components ...
... observed a 2.2 % weight loss in the region of 250-400 ° C . However , after annealing the parylene AF - 4 film at 450 C for 0.5 hr in nitrogen , we only observed about 0.5 % weight loss . This indicated presence of volatile components ...
Page 29
... observed at 390 ° C that may be interpreted as another glass transition temperature . Also , a melting ( Tm ) was observed at about 510 ° C related to crystalline region . This DSC analysis indicates that parylene AF - 4 is a ...
... observed at 390 ° C that may be interpreted as another glass transition temperature . Also , a melting ( Tm ) was observed at about 510 ° C related to crystalline region . This DSC analysis indicates that parylene AF - 4 is a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films