Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 10
... observed in CHx films which exhibited an ɛ of 3.4 . These films were judged to be highly crosslinked . Under different deposition conditions , CHx films were prepared with much lower stress ( 250 MPa ) and lower ε ( 2.7 ) , however ...
... observed in CHx films which exhibited an ɛ of 3.4 . These films were judged to be highly crosslinked . Under different deposition conditions , CHx films were prepared with much lower stress ( 250 MPa ) and lower ε ( 2.7 ) , however ...
Page 26
... observed a 2.2 % weight loss in the region of 250-400 ° C . However , after annealing the parylene AF - 4 film at 450 C for 0.5 hr in nitrogen , we only observed about 0.5 % weight loss . This indicated presence of volatile components ...
... observed a 2.2 % weight loss in the region of 250-400 ° C . However , after annealing the parylene AF - 4 film at 450 C for 0.5 hr in nitrogen , we only observed about 0.5 % weight loss . This indicated presence of volatile components ...
Page 29
... observed at 390 ° C that may be interpreted as another glass transition temperature . Also , a melting ( Tm ) was observed at about 510 ° C related to crystalline region . This DSC analysis indicates that parylene AF - 4 is a ...
... observed at 390 ° C that may be interpreted as another glass transition temperature . Also , a melting ( Tm ) was observed at about 510 ° C related to crystalline region . This DSC analysis indicates that parylene AF - 4 is a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber