Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 17
... obtained by depositing the film on a wafer and pressing the wafer against the crystal surface , the method has a number of drawbacks . First , because of the rigidity of the substrate , good optical contact cannot be obtained in more ...
... obtained by depositing the film on a wafer and pressing the wafer against the crystal surface , the method has a number of drawbacks . First , because of the rigidity of the substrate , good optical contact cannot be obtained in more ...
Page 72
... obtained by subtracting the base spectrum stored in the memory . The polyamic acid films spun on silicon substrate ... obtained by normalizing the sample band ratio with that of a fully cured polyimide films . The band ratio of the fully ...
... obtained by subtracting the base spectrum stored in the memory . The polyamic acid films spun on silicon substrate ... obtained by normalizing the sample band ratio with that of a fully cured polyimide films . The band ratio of the fully ...
Page 162
... obtained from samples S3 , as - deposited and after etching for different times . Figures 11 ( right : RBS spectra obtained from samples S5 , as - deposited and after etching for different times . The more interesting and somewhat ...
... obtained from samples S3 , as - deposited and after etching for different times . Figures 11 ( right : RBS spectra obtained from samples S5 , as - deposited and after etching for different times . The more interesting and somewhat ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber