Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 5
... polymer , perhaps in association with oxidation . Fluorinated Polyimides ε Polyimides as a class of organic polymers are clearly the most widely characterized as thin films for microelectronic applications . Although used as an IC IMD ...
... polymer , perhaps in association with oxidation . Fluorinated Polyimides ε Polyimides as a class of organic polymers are clearly the most widely characterized as thin films for microelectronic applications . Although used as an IC IMD ...
Page 59
... organic polymers exhibit lower dielectric constants than inorganic oxides and are therefore potential candidates for low e dielectric applications . However , to be used for microchip fabrication , there are some two dozen properties in ...
... organic polymers exhibit lower dielectric constants than inorganic oxides and are therefore potential candidates for low e dielectric applications . However , to be used for microchip fabrication , there are some two dozen properties in ...
Page 171
... organic low ε dielectric spin on polymers for use as ILD materials . In the past few years many organic materials have been proposed as low & ILD candidates , however , the high thermal budgets with temperatures in the range of 450 ° C ...
... organic low ε dielectric spin on polymers for use as ILD materials . In the past few years many organic materials have been proposed as low & ILD candidates , however , the high thermal budgets with temperatures in the range of 450 ° C ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber