Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 60
... oxazole rings in 1 , resulting in lower reactivity of the fluorine atoms . However , the oxazole ring has a different geo- metry due to the larger Van der Waals radius of the sulfur atom as compared to the oxygen atom on the oxazole ...
... oxazole rings in 1 , resulting in lower reactivity of the fluorine atoms . However , the oxazole ring has a different geo- metry due to the larger Van der Waals radius of the sulfur atom as compared to the oxygen atom on the oxazole ...
Page 66
... oxazole polymers 14 ( 15a / 14b , 15b / 14c , 15c / 14e , 15d / 14g ) . This effect is caused by the different geometries of the oxazole and thiazole rings . Whi- le the angle between the two exocyclic bonds in 2- and 5 - position of ...
... oxazole polymers 14 ( 15a / 14b , 15b / 14c , 15c / 14e , 15d / 14g ) . This effect is caused by the different geometries of the oxazole and thiazole rings . Whi- le the angle between the two exocyclic bonds in 2- and 5 - position of ...
Page 68
... oxazole ring itself can not be the weak link , since the decomposition temperatures of the polymers 16 are in the range of 450-490 ° C , as expected . An explanation for this effect may be found in the presence of the trifluoromethyl ...
... oxazole ring itself can not be the weak link , since the decomposition temperatures of the polymers 16 are in the range of 450-490 ° C , as expected . An explanation for this effect may be found in the presence of the trifluoromethyl ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber