Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 127
... Oxide and Si - Rich oxide capped FSG films . The removal rate , refractive index ( RI ) , surface roughness , contact angle , water content by FTIR and thermal desorption spectroscopy ( TDS ) were studied . The FSG films are polished ...
... Oxide and Si - Rich oxide capped FSG films . The removal rate , refractive index ( RI ) , surface roughness , contact angle , water content by FTIR and thermal desorption spectroscopy ( TDS ) were studied . The FSG films are polished ...
Page 128
... oxide ( SRO ) layers were deposited on some of the FSG films as a capping layer without breaking the vacuum between ... Oxide ( Tox ) TEOS a . Thermal Oxide on Si sy Subentole b . UTEOS on Si 2kA SI - Rich Oxide ( SRO ) FSG c . FSG on Si ...
... oxide ( SRO ) layers were deposited on some of the FSG films as a capping layer without breaking the vacuum between ... Oxide ( Tox ) TEOS a . Thermal Oxide on Si sy Subentole b . UTEOS on Si 2kA SI - Rich Oxide ( SRO ) FSG c . FSG on Si ...
Page 129
... oxide films ( Thermal oxide and PECVD TEOS ) and fluorine doped films , with and without a silicon - rich capping layer , was evaluated . The CMP rate of Thermal Oxide was the lowest of all the films , followed by TEOS and the three FSG ...
... oxide films ( Thermal oxide and PECVD TEOS ) and fluorine doped films , with and without a silicon - rich capping layer , was evaluated . The CMP rate of Thermal Oxide was the lowest of all the films , followed by TEOS and the three FSG ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films