Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 35
Page 127
... Oxide and Si - Rich oxide capped FSG films . The removal rate , refractive index ( RI ) , surface roughness , contact angle , water content by FTIR and thermal desorption spectroscopy ( TDS ) were studied . The FSG films are polished ...
... Oxide and Si - Rich oxide capped FSG films . The removal rate , refractive index ( RI ) , surface roughness , contact angle , water content by FTIR and thermal desorption spectroscopy ( TDS ) were studied . The FSG films are polished ...
Page 128
... oxide ( SRO ) layers were deposited on some of the FSG films as a capping layer without breaking the vacuum between ... Oxide ( Tox ) TEOS a . Thermal Oxide on Si sy Subentole b . UTEOS on Si 2kA SI - Rich Oxide ( SRO ) FSG c . FSG on Si ...
... oxide ( SRO ) layers were deposited on some of the FSG films as a capping layer without breaking the vacuum between ... Oxide ( Tox ) TEOS a . Thermal Oxide on Si sy Subentole b . UTEOS on Si 2kA SI - Rich Oxide ( SRO ) FSG c . FSG on Si ...
Page 129
... oxide films ( Thermal oxide and PECVD TEOS ) and fluorine doped films , with and without a silicon - rich capping layer , was evaluated . The CMP rate of Thermal Oxide was the lowest of all the films , followed by TEOS and the three FSG ...
... oxide films ( Thermal oxide and PECVD TEOS ) and fluorine doped films , with and without a silicon - rich capping layer , was evaluated . The CMP rate of Thermal Oxide was the lowest of all the films , followed by TEOS and the three FSG ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber