Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 127
This study investigates the behavior of FSG film in the Chemical Mechanical
Polishing ( CMP ) environment and compares those characteristics to undoped
TEOS ( UTEOS ) , Thermal Oxide and Si - Rich oxide capped FSG films . The
removal ...
This study investigates the behavior of FSG film in the Chemical Mechanical
Polishing ( CMP ) environment and compares those characteristics to undoped
TEOS ( UTEOS ) , Thermal Oxide and Si - Rich oxide capped FSG films . The
removal ...
Page 128
In addition to the FSG films and the UTEOS films a set of thermal oxide wafers
was used as a reference . Si - Rich oxide ( SRO ) layers were deposited on some
of the FSG films as a capping layer without breaking the vacuum between the ...
In addition to the FSG films and the UTEOS films a set of thermal oxide wafers
was used as a reference . Si - Rich oxide ( SRO ) layers were deposited on some
of the FSG films as a capping layer without breaking the vacuum between the ...
Page 129
RESULTS ( a ) CMP Removal Rate A comparison between the CMP removal rate
of undoped oxide films ( Thermal oxide and PECVD TEOS ) and fluorine doped
films , with and without a silicon - rich capping layer , was evaluated . The CMP ...
RESULTS ( a ) CMP Removal Rate A comparison between the CMP removal rate
of undoped oxide films ( Thermal oxide and PECVD TEOS ) and fluorine doped
films , with and without a silicon - rich capping layer , was evaluated . The CMP ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel