Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 89
... oxygen plasma system . NDL has measured an etch rate of 200 nm / min at 30 W in an oxygen plasma . Gore has measured an etch rate of 50 nm / min in a PlasmaTherm 7000 RIE system using an oxygen flow rate of 200 sccm , a pressure of 100 ...
... oxygen plasma system . NDL has measured an etch rate of 200 nm / min at 30 W in an oxygen plasma . Gore has measured an etch rate of 50 nm / min in a PlasmaTherm 7000 RIE system using an oxygen flow rate of 200 sccm , a pressure of 100 ...
Page 156
... oxygen RIE patterning of DLC , an oxidation - resistant modified DLC would be advantageous , since such a material could more easily integrated into the structure during fabrication . The incorporation of Si into DLC was expected to ...
... oxygen RIE patterning of DLC , an oxidation - resistant modified DLC would be advantageous , since such a material could more easily integrated into the structure during fabrication . The incorporation of Si into DLC was expected to ...
Page 168
... oxygen plasma is used to remove the resist materials . However , because a - C : F films are not resistant to oxygen plasma exposure and have little mechanical strength , we deposited a SiO2 layer over the a - C : F film to protect it ...
... oxygen plasma is used to remove the resist materials . However , because a - C : F films are not resistant to oxygen plasma exposure and have little mechanical strength , we deposited a SiO2 layer over the a - C : F film to protect it ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber