Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 82
3 ) : the latter effect may suggest that a loss peak may exist between 10 and 100
Hz , but its presence has not been confirmed yet . Such a peak may be related to
the presence of C = O polar groups in the films , also detected by FTIR ...
3 ) : the latter effect may suggest that a loss peak may exist between 10 and 100
Hz , but its presence has not been confirmed yet . Such a peak may be related to
the presence of C = O polar groups in the films , also detected by FTIR ...
Page 106
The increase in the peak heights of the reflections after calcination probably
result from the increase in the scattering - density contrast after pyrolysis of the
surfactant . The full width at half maximum of the ( 100 ) reflection does not
change ...
The increase in the peak heights of the reflections after calcination probably
result from the increase in the scattering - density contrast after pyrolysis of the
surfactant . The full width at half maximum of the ( 100 ) reflection does not
change ...
Page 162
The more interesting and somewhat surprising observation in Fig . 11 is that ,
contrary to expectations , no oxygen peak or Si enrichment can be detected in
sample S5 even after extended etch times . However , theoretical calculations
with the ...
The more interesting and somewhat surprising observation in Fig . 11 is that ,
contrary to expectations , no oxygen peak or Si enrichment can be detected in
sample S5 even after extended etch times . However , theoretical calculations
with the ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel