Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 99
... percent to above 99 % . The dielectric permittivity decreases as the porosity increases , and can be tailored by changing xerogels ' porosity . Corresponding author , phone : 972-995-9647 , email : jin@spdc.ti.com 99 Mat . Res . Soc ...
... percent to above 99 % . The dielectric permittivity decreases as the porosity increases , and can be tailored by changing xerogels ' porosity . Corresponding author , phone : 972-995-9647 , email : jin@spdc.ti.com 99 Mat . Res . Soc ...
Page 178
... percent solids , the nominal single coat thickness ranges from 0.4 - 2.0 μm . FLARE and PFCB are both R & D materials with nominal single coat thicknesses of 1.0 μm . PLANARIZATION The low viscosity and the ability to flow during cure ...
... percent solids , the nominal single coat thickness ranges from 0.4 - 2.0 μm . FLARE and PFCB are both R & D materials with nominal single coat thicknesses of 1.0 μm . PLANARIZATION The low viscosity and the ability to flow during cure ...
Page 184
... percent were obtained , respectively . Dielectric constant measurements , made using lithographically patterned and etched test sites , gave relative dielectric constant values of 3.5 ± 0.1 at a 3 % Si - F / Si - O ratio for the PECVD ...
... percent were obtained , respectively . Dielectric constant measurements , made using lithographically patterned and etched test sites , gave relative dielectric constant values of 3.5 ± 0.1 at a 3 % Si - F / Si - O ratio for the PECVD ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber