Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 26
... performed dynamic and isothermal TGA analysis on parylene AF - 4 films deposited on the silicon wafers . The thickness of the film was about 1um . TGAs were performed on a Cahn TG 131 ( ATI Instruments ) with a heating rate of 10 ° C ...
... performed dynamic and isothermal TGA analysis on parylene AF - 4 films deposited on the silicon wafers . The thickness of the film was about 1um . TGAs were performed on a Cahn TG 131 ( ATI Instruments ) with a heating rate of 10 ° C ...
Page 141
... performed XPS measurement and quantitative analysis , which have resulted in 12.8at . % . This value is fairly higher than reported value ( around 4at . % [ 3-6 ] ) . Thus , we have performed Ar ion sputtering on the film in order to ...
... performed XPS measurement and quantitative analysis , which have resulted in 12.8at . % . This value is fairly higher than reported value ( around 4at . % [ 3-6 ] ) . Thus , we have performed Ar ion sputtering on the film in order to ...
Page 150
... performed by boiling the samples in distilled H2O for one hour ( 95 ° C and 690 Torr ) . All annealing treatments were performed at 400 ° C , in vacuum ( 2 x 10-6 Torr ) , for 30 min . , unless otherwise noted . Other annealing ambients ...
... performed by boiling the samples in distilled H2O for one hour ( 95 ° C and 690 Torr ) . All annealing treatments were performed at 400 ° C , in vacuum ( 2 x 10-6 Torr ) , for 30 min . , unless otherwise noted . Other annealing ambients ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber