Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 8
... planarization characteristics of BCB polymers are exceptional compared to many materials . It has been suggested that in some cases , the planarization achieved could eliminate the need for CMP process steps [ 21 ] . The concern most ...
... planarization characteristics of BCB polymers are exceptional compared to many materials . It has been suggested that in some cases , the planarization achieved could eliminate the need for CMP process steps [ 21 ] . The concern most ...
Page 178
... planarization is somewhat compromised by a rapid hot - plate cure . In this lab , both BCB and PFCB were hot - plate ... PLANARIZATION The low viscosity and the ability to flow during cure of BCB and PFCB , aid in gap - filling and ...
... planarization is somewhat compromised by a rapid hot - plate cure . In this lab , both BCB and PFCB were hot - plate ... PLANARIZATION The low viscosity and the ability to flow during cure of BCB and PFCB , aid in gap - filling and ...
Page 179
... Planarization over narrow gaps . Table III . Local Planarization 1 um PFCB BCB FLARE PFCB metal height ( um ) 0.5 0.7 0.82 polymer thickness in the field ( um ) 1.1 0.7 1.04 gap between metal lines ( um ) 2.4 3.5 3.2 residual topography ...
... Planarization over narrow gaps . Table III . Local Planarization 1 um PFCB BCB FLARE PFCB metal height ( um ) 0.5 0.7 0.82 polymer thickness in the field ( um ) 1.1 0.7 1.04 gap between metal lines ( um ) 2.4 3.5 3.2 residual topography ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber