Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 119
... plasma treatment on the moisture absorption and dielectric properties of SiOF films were carried out in terms of air exposure time . The reliability test of Cu / TiN / SiOF ... plasma from the plasma chamber to the reaction chamber . 119.
... plasma treatment on the moisture absorption and dielectric properties of SiOF films were carried out in terms of air exposure time . The reliability test of Cu / TiN / SiOF ... plasma from the plasma chamber to the reaction chamber . 119.
Page 122
... plasma treatment SI - OH O , plasma treatment 4000 3600 3200 2800 2400 1000 400 3000 3200 Wavenumber ( cm - 1 ) ( a ) 3400 3600 Wavenumber ( cm - 1 ) ( b ) 3800 4000 Fig . 4 FTIR spectra of SiOF films exposed to the atmosphere for 7 ...
... plasma treatment SI - OH O , plasma treatment 4000 3600 3200 2800 2400 1000 400 3000 3200 Wavenumber ( cm - 1 ) ( a ) 3400 3600 Wavenumber ( cm - 1 ) ( b ) 3800 4000 Fig . 4 FTIR spectra of SiOF films exposed to the atmosphere for 7 ...
Page 124
... plasma treatment , no appreciable peak directly related to moisture absorption was detected . The C - V characteristics of the O2 plasma treated SiOF film reveals the sound dielectric properties even after the boiling treatment . The ...
... plasma treatment , no appreciable peak directly related to moisture absorption was detected . The C - V characteristics of the O2 plasma treated SiOF film reveals the sound dielectric properties even after the boiling treatment . The ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber